Channel-carrier mobility parameters for 4H SiC MOSFETs

In this paper, mobility parameters for n-channel 4H SiC MOSFETs are extracted and implemented into 2D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral n-channel 4H SiC MOSFET's with nitrided oxide-semiconductor interface, exhibiting normal mobility behavior. The effects of interface-trap density on the model parameters are discussed.