1.3-/spl mu/m InP-InGaAsP lasers fabricated on Si substrates by wafer bonding

1.3-/spl mu/m InP-InGaAsP lasers have been successfully fabricated on Si substrates by wafer bonding. InP-InGaAsP thin epitaxial films are prepared by selective etching of InP substrates and then bonded to Si wafers, after which the laser structures are fabricated on the bonded thin films. The bonding temperature has been optimized to be 400/spl deg/C by considering bonding strength, quality of the bonded crystal, and compatibility with device processes. Room-temperature continuous-wave (RT CW) operation has been achieved for 6-/spl mu/m-wide mesa lasers with a threshold current of 39 mA, which is identical to that of conventional lasers on InP substrates. Additionally, the lasers fabricated on Si have exhibited higher output powers than the lasers on InP, which is due to higher thermal conductivity of Si substrates. From these results, the wafer bonding is thought to be a promising technique to integrate optical devices on Si and implement optical interconnections between Si LSI chips.