By Topic

Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Jong Kyung Park ; Dept. of Electrical Engineering, KAIST, Daejeon 305-701, Korea ; Dong-Il Moon ; Yang-Kyu Choi ; Seok-Hee Lee
more authors