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A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrciation of hp45 LOP devices

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6 Author(s)
S. Inumiya ; Semicond. Leading Edge Technol., Inc., Tsukuba ; Y. Akasaka ; T. Matsuki ; F. Ootsuka
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