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A 60-GHz fT super self-aligned selectively grown SiGe-base (SSSB) bipolar transistor with trench isolation fabricated on SOI substrate and its application to 20-Gb/s optical transmitter ICs

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7 Author(s)
F. Sato ; ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan ; T. Hashimoto ; H. Tezuka ; M. Soda
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