By Topic

Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Chung-Kuang Huang ; Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA ; Zhang, W.E. ; Yang, C.H.