Three-dimensional (3D) stacked IC technologies have become a central topic over the past few years, and start to become reality with the introduction of 3D devices in commercialization. Among the technical challenges raised by this technology, thin wafer handling remains one of the most challenging. A large number of publications have focused on this process since several years to present the performances of the different competitors. The goal of this paper is to discuss the 300mm interposer creation process using 2 of the most spread temporary bonding techniques: ZoneBOND™ and WSS (Wafer Support System). The comparison will be achieved during the different process steps considering 50μm or 80μm thick silicon interposers. The comparison will be done considering the 2 major challenges of temporary bonding integration: interposer flatness control and stability during the backside process. Finally this work has enabled us to identify the drawbacks and advantages of each technique for 3D integration.