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New Low-Frequency Dispersion Model for AlGaN/GaN HEMTs Using Integral Transform and State Description

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7 Author(s)
Friedbert van Raay ; Fraunhofer Inst. of Applied Solid-State Physics, Freiburg, Germany ; RĂ¼diger Quay ; Matthias Seelmann-Eggebert ; Dirk Schwantuschke
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