In this study, we report the effects of electrode and annealing on the magnetic properties of CoFeB-MgO-CoFeB-TbFeCo structures. The samples of structure bottom electrode/Co20Fe60B20(x nm)/MgO(1)/Co20Fe60B20(0 or 1 nm)/Tb23(Fe80Co20)77(5 nm)/top electrode were deposited on SiO2 substrates at room temperature. The structures were then annealed at the temperature ranging from 250 to 400°Cunder 5 kOe perpendicular applied field for two hours. We found that the magnetic properties of the CoFeB free layer depend on the electrode stack structures. The perpendicular magnetic easy axis of the CoFeB free layer can be maintained after annealing up to 400°C.