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Germanium–Tin \hbox {n}^{+}\hbox {/p} Junction Formed Using Phosphorus Ion Implant and 400 ^{\circ} \hbox {C} Rapid Thermal Anneal

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13 Author(s)
Lanxiang Wang ; Department of Electrical and Computer Engineering and the Graduate School for Integrative Sciences and Engineering , National University of Singapore, Singapore ; Shaojian Su ; Wei Wang ; Yue Yang
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