A dual-material-gate junctionless nanowire transistor (DMG-JNT) is proposed in this paper. Its characteristic is demonstrated and compared with a generic single-material-gate JNT using 3-D numerical simulations. The results show that the DMG-JNT has a number of desirable features, such as high ON-state current, a large ON/OFF current ratio, improved transconductance Gm, high unity-gain frequency fT, high maximum oscillation frequency fMAX, and reduced drain-induced barrier lowering. The effects of different control gate ratios Ra and varied work-function differences between the two gates are studied. Finally, the optimization of Ra and the work-function difference for the proposed DMG-JNT is presented.