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Evaluation of band gap narrowing of a tensile-strained Ge on InxGa1−xAs and its transfer onto glass substrate for solar cell applications

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4 Author(s)
Yutaka Hoshina ; Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan ; Masayuki Shimizu ; Kotaro Tadokoro ; Akira Yamada