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Electrochemical Metallization Resistive Memory Devices Using \hbox {ZnS-SiO}_{2} as a Solid Electrolyte

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5 Author(s)
J. Q. Huang ; Data Storage Institute, Agency for Science, Technology and Research (A $^{ast}$STAR), Singapore ; L. P. Shi ; E. G. Yeo ; K. J. Yi
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