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ESD-Protected K-Band Low-Noise Amplifiers Using RF Junction Varactors in 65-nm CMOS

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4 Author(s)
Ming-Hsien Tsai ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Hsu, S.S.H. ; Fu-Lung Hsueh ; Chewn-Pu Jou