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Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated  \hbox {Al}_{2}\hbox {O}_{3} as Gate Dielectrics

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8 Author(s)
Chao Chen ; State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron Sci. & Technol. of China, Chengdu, China ; Xingzhao Liu ; Benlang Tian ; Ping Shu
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