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Vertical Si-Nanowire n -Type Tunneling FETs With Low Subthreshold Swing ( \leq \hbox {50} \hbox {mV/decade} ) at Room Temperature

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5 Author(s)
Ramanathan Gandhi ; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR) , Singapore ; Zhixian Chen ; Navab Singh ; Kaustav Banerjee
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