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Second Harmonic Generation Indicates a Better Si/Ge Interface Quality for Higher Temperature and With \hbox {N}_{2} Rather Than With \hbox {H}_{2} as the Carrier Gas

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6 Author(s)
V. K. Valev ; Institute for Nanoscale Physics and Chemistry, Molecular and Nanomaterials, Katholieke Universiteit Leuven, Leuven, Belgium ; M. K. Vanbel ; B. Vincent ; V. V. Moshchalkov
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