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\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As} Tunneling Field-Effect Transistors With an I_{\rm on} of 50 \mu\hbox {A}/\mu\hbox {m} and a Subthreshold Swing of 86 mV/dec Using \hbox {HfO}_{2} Gate Oxide

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6 Author(s)
Han Zhao ; Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA ; Chen, Y. ; Wang, Y. ; Zhou, F.
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