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Publisher's Note: “Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers” [J. Appl. Phys. 108, 013511 (2010)]

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6 Author(s)
Nagano, M. ; Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan ; Tsuchida, H. ; Suzuki, T. ; Hatakeyama, T.
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