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Improved Optical and ESD Characteristics for GaN-Based LEDs With an \hbox {n}^{-}\hbox {-GaN} Layer

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8 Author(s)
T. H. Chiang ; Institute of Microelectronics, the Department of Electrical Engineering, the Advanced Optoelectronic Technology Center, and the Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan ; Y. Z. Chiou ; S. J. Chang ; C. K. Wang
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