By Topic

A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Dubey, Sarvesh ; Department of Electronics Engineering, Centre for Research in Microelectronics (CRME), Institute of Technology, Banaras Hindu University, Varanasi, Uttar Pradesh 221005, India ; Tiwari, Pramod Kumar ; Jit, S.

PACS Codes