A 32nm RF SOC technology is developed with high-k/metal-gate triple-transistor architecture simultaneously offering devices with high performance and very low leakage to address advanced RF/mobile communications markets. A high performance NMOS achieves an fT of 420GHz. Concurrently, a low leakage 30pA/um NMOS achieves an fT of 218GHz. Deep-nwell/guard rings improves noise isolation by >50dB. High Q inductors, >7V breakdown voltage power amplifier transistors, varactors, and precision passives are also presented.