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The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 ^{\circ}{\hbox {C}} ) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System

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7 Author(s)
Yuji Saito ; Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai, Japan ; Katsuyuki Sekine ; Ryu Kaihara ; Masaki Hirayama
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