Scheduled System Maintenance:
On April 27th, single article purchases and IEEE account management will be unavailable from 2:00 PM - 4:00 PM ET (18:00 - 20:00 UTC).
We apologize for the inconvenience.
By Topic

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Cheng-Huang Kuo ; Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli, Taiwan ; Fu, Y.K. ; Chi, G.C. ; Shoou-Jinn Chang