Multiple closely spaced layers of GaAs1−xPx, which approximate a one-dimensional crystalline superlattice, have been created by periodically pulsing PH3 into an AsH3-PH3-Ga-HCl vapor-growth apparatus. The phosphorus mole fraction varies between maximum and minimum values with a period typically less than 200Å. Structures with up to 150 such layers have been produced. The crystal growth process and methods of characterization are discussed briefly.
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