The technique of nuclear backscattering has been used to analyze the interface reactions of Nb-Nb2O5-Bi multilayer films. This new analytical technique is explained in detail. It has been concluded that the drastic and erratic changes in the electrical properties of niobium oxide switchable resistor devices that take place at 450°C are associated with the gross migration of oxygen from the oxide to the niobium layer. The accompanying reactions of bismuth with the oxide are relatively moderate, diffusing less than 3 × 1011 atoms/cm2 of bismuth into the oxide layer.
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