The behavior of small semiconductor devices is simulated using an advanced Monte Carlo carrier transport model. The model improves upon the state of the art by including the full band structure of the semiconductor, by using scattering rates computed consistently with the band structure, and by accounting for both long- and short-range interactions between carriers. It is sufficiently flexible to describe both unipolar and bipolar device operation, for a variety of semiconductor materials and device structures. Various results obtained with the associated DAMOCLES program for n- and p-channel Si MOSFETs, GaAs MESFETs, and Si bipolar junction transistors are presented.
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