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Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging

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7 Author(s)
Mermoux, M. ; LEPMI/INPG, 1130 rue de la piscine, BP 75, 38402 St. Martin d''Hères Cedex, France ; Crisci, A. ; Baillet, F. ; Destefanis, V.
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