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The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI

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11 Author(s)
Madan, A. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Verma, R. ; Arora, R. ; Wilcox, E.P.
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