We report electromigration techniques for the fabrication of planar-type tunnel junctions with ferromagnetic nanogap system. In these techniques, by monitoring the current passing through the devices, we are easily able to obtain the planar-type Ni-Vacuum-Ni tunnel junctions. In this paper, magnetoresistance (MR) properties of the planar-type Ni-based tunnel junctions formed by stepwise feedback-controlled electromigration (SFCE) and field-emission-induced electromigration (activation) are studied. We performed the SFCE method for Ni nanoconstrictions connecting asymmetrical butterfly-shape electrodes. Furthermore, the activation technique was applied to Ni nanogaps with separations of 15-45 nm. MR ratio of the devices formed by the SFCE exhibited approximately 4% at 16 K . On the other hand, the devices fabricated by the activation showed MR ratio of above 300% at 16 K. These results suggest that it is possible to fabricate planar-type ferromagnetic tunnel junctions with vacuum barriers by electromigration techniques.