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Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

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5 Author(s)
Hofmann, T. ; Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA ; Herzinger, C.M. ; Tiwald, T.E. ; Woollam, J.A.
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