Part I of this paper presented a generalized model of heat effects operative during surface reactions. The enhancement in reaction rate due to autothermic effects was analyzed as a function of activation energy, bulk temperature, and a parameter termed the characteristic temperature. Application of this model to experimental plasma etching data is presented in part II of this work. Characteristic temperatures calculated from experimental data in numerous plasma etching systems agree closely with the critical characteristic temperature predicted by the heat of the reaction model. Possible reasons for this consistency are given. Further, the autothermic enhancement in the Ta‐CF4/O2 etching system is accurately predicted as a function of reactant concentration by a heat of reaction model.