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Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams

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6 Author(s)
Uedono, A. ; Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan ; Chichibu, S.F. ; Higashiwaki, M. ; Matsui, T.
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