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Vacancy-type defects in strained-Si layers deposited on SiGe/Si structures probed by using monoenergetic positron beams

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6 Author(s)
Uedono, A. ; Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan ; Hattori, N. ; Naruoka, Hideki ; Ishibashi, Shoji
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