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Effect of gallium nitride template layer strain on the growth of InxGa1-xN/GaN multiple quantum well light emitting diodes

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9 Author(s)
Johnson, M.C. ; Lawrence Berkeley National Laboratory, Materials Sciences Division, I Cyclotron Road, MS2R0200, Berkeley, California 94720-8197 ; Bourret-Courchesne, E.D. ; Wu, J. ; Liliental-Weber, Z.
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