Skip to Main Content
| Create Account
| Sign In
IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards,
eBooks, and eLearning courses.
Learn more about:
IEEE Xplore subscriptions
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1063/1.1587270
Effects of Cl doping on the photoluminescence (PL) of ZnTe homoepitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy using n-butylchloride (n-BuCl) have been investigated. A quite strong donor bound excitonic emission was observed by increasing the n-BuCl transport rate, implying that Cl is incorporated into ZnTe layer as a donor. From the temperature dependence of PL spectra, the thermal activation energy of donor bound excitonic emission was found to be 5.9 meV. Two luminescence bands due to donor-acceptor pair emission appeared at 2.34 and 2.22 eV in the layer grown at an n-BuCl transport rate as high as 0.2 μmol/min. The donor and acceptor levels corresponding to the PL peak at 2.34 eV were estimated to be 22 and 51 meV from the excitation power dependence of PL peak energy, respectively. © 2003 American Institute of Physics.
Journal of Applied Physics
Date of Publication:
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.