Skip to Main Content
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1063/1.1445278
In this work we used the differential photocurrent technique to measure the strain-induced piezoelectric field in pseudomorphic InxGa1-xAs/GaAs heterostructures grown by molecular beam epitaxy on (111)B GaAs substrates. Single and multiple quantum well p–i–n diodes with two different In fractions in the well were analyzed in the temperature range of 25–300 K. Our results for a sample with a 17% In fraction confirm the previously reported value of the pyroelectric coefficient for a similar sample obtained by photoreflectance spectroscopy, hence, the equivalence of the differential photocurrent and photoreflectance techniques is also demonstrated. For a sample with 21% In, we report experimental determination of the temperature dependence of the piezoelectric constant and, therefore, of the strain-induced component of the pyroelectric coefficient. © 2002 American Institute of Physics.
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.