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Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition

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8 Author(s)
Fleischmann, T. ; Department of Electrical and Electronic Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom ; Moran, M. ; Hopkinson, M. ; Meidia, H.
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