By Topic

Erratum: “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy” [J. Appl. Phys. 81, 1905 (1997)]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Yip, R.Y.-F. ; Groupe de recherche en physique et technologie des couches minces (GCM), Département de génie physique, École Polytechnique de Montréal, C.P. 6079, succ. “Centre-Ville,” Montréal QC, H3C 3A7 Canada ; Aıt-Ouali, A. ; Bensaada, A. ; Desjardins, P.
more authors