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A sophisticated three-dimensional (3D) interconnection structure for ultracompact 3D monolithic microwave integrated circuits (MMICs) has been successfully fabricated by using inductively coupled-plasma etching with a double-layer mask consisting of WSi covered with a Si-containing photoresist. The developed etching method enables us to form via holes to any levels of interconnection simultaneously. The field-effect transistor (FET) parameters change little when the 10-μm-thick polyimide layer is stacked on metal–semiconductor FETs. A unique inductor with a vertical structure is also fabricated by this new etching method. This method will thus result in smaller chip area, higher performance, and greater design flexibility in MMICs. © 2002 American Vacuum Society.
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