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Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors

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7 Author(s)
Nakajima, Anri ; Research Center for Nanodevices and Systems, Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan ; Yoshimoto, Takashi ; Kidera, Toshirou ; Obata, Katsunori
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