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Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

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9 Author(s)
Hoke, W.E. ; Raytheon Microelectronics Center, Andover, Massachussetts 01810 ; Lemonias, P.J. ; Mosca, J.J. ; Lyman, P.S.
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