Skip to Main Content
| Create Account
| Sign In
IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards,
eBooks, and eLearning courses.
Learn more about:
IEEE Xplore subscriptions
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1116/1.590504
A reliable process has been developed for the fabrication of all Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes, and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single-electron transistor made of 0.3×0.3 μm2 area junctions clearly shows the e-periodic Coulomb blockade modulation by a voltage applied to a gate. © 1999 American Vacuum Society.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Date of Publication:
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.