Skip to Main Content
IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards,
eBooks, and eLearning courses.
Learn more about:
IEEE Xplore subscriptions
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1116/1.588919
Low temperature growth of GaAs not only provides useful semi‐insulating layers in a variety of devices, but also is interesting from a materials and crystal growth point of view. In this work we have utilized an in situ spectroscopic ellipsometer having 44 wavelength regions in the range 4000–8000 Å to monitor the low temperature growth of GaAs. Several different regions of growth have been observed, in agreement with earlier studies utilizing single wavelength ellipsometry. An initial region of homogeneous growth is followed by regions of material that exhibit varying optical properties. The complex refractive index of the epitaxial LT‐GaAs films have been extracted from the real‐time data acquired during the homogenous growth region. Ex situ characterization of these films was performed using high‐resolution x‐ray diffraction to determine the excess As concentration. Films in which the low temperature growth was stopped within the homogeneous growth regime have been characterized with a multiwavelength variable angle ellipsometer, and the complex refractive index of these films in the range 4000–17 000 Å have been extracted. © 1996 American Vacuum Society
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.