By Topic

Mobile dislocation density and strain relaxation rate evolution during InxGa1-xAs/GaAs heteroepitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Lynch, C. ; Division of Engineering, Box D, Brown University, Providence, Rhode Island 02912 ; Chason, E. ; Beresford, R.