Skip to Main Content
IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards,
eBooks, and eLearning courses.
Learn more about:
IEEE Xplore subscriptions
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1116/1.1392397
Hydrogen-free silicon nitride (SiNx) with x varying from 0 to 1.3 were prepared by sputtering a Si target with concurrent nitrogen ion (N2+) assist at an energy of 250 eV. The value of x saturated at 1.3 when the assist N2+ beam current was higher than 25 mA. As x increases from 0 to 1.3, the hardness of the films increases from 12.2 to 21.5 GPa, the elastic modulus increases from 191 to 256 GPa, the friction coefficient drops from 0.65 to 0.37, the compressive stress rises from -0.52 to -1.4 GPa, and the etching rate in buffered hydrofluoric acid increases from a negligible small value to 7 nm min-1. Potassium hydroxide does not attack the film at any composition. Ion assist resulted in peening and densification of the film structure, causing the SiN1.3 films to have high hardness, high stability against oxidation in air, and great compressive stress. Ion bombardment also generated defects, thus giving rise to the moderate etching rate of SiN1.3 in BHF. The good mechanical and etching properties suggest that dual ion beam deposition SiNx films are potentially useful materials in microelectromechanical devices applications. © 2001 American Vacuum Society.
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.