By Topic

Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Moriya, Tsuyoshi ; Device Analysis Technology Laboratories, NEC Corporation, Kawasaki, Kanagawa 211-8666, Japan ; Ito, Natsuko ; Uesugi, Fumihiko ; Hayashi, Yuji
more authors