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Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer

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5 Author(s)
Olsson, F. ; School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, S-164 40 Kista, Sweden ; Xie, M. ; Lourdudoss, S. ; Prieto, I.
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