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Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition

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4 Author(s)
Deenapanray, P.N.K. ; Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, A.C.T. 0200, Australia ; Tan, H.H. ; Jagadish, C. ; Auret, F.D.

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