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Remarkable reduction of contact resistance in the metal-p+ silicon Schottky barriers is obtained using the BF2/B mixed implant instead of the BF2 implant. Upon the annealing, higher remaining contents of both boron and fluorine in a shallow p+ surface layer are observed in the mixed implanted silicon. Variation of the dopants loss observed with different F doses is explained by introducing the following two types of surface reaction, i.e., (1) recombination of F–Si to make gaseous fluorosilyl/oxyfluorosilyl products and (2) recombination of F–B to form gaseous boron fluorides. Increasing the amount of the F–B reaction accelerates the recombination reaction of F–Si due to the reduced surface p+ doping level, and then results in the anomalous enhancement of the F removal. For the mixed implant, shortening of the average interdopant separation due to higher B contents within the contact depletion width reduces the potential fluctuations induced by the dopant discreteness, and thus leads to the improved uniformity of contact resistance. © 1999 American Institute of Physics.
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